Photosensitive materials for microstructures and thick layers
A NEW RANGE OF MATERIALS
The Dilase technology developed and patented by Kloé is based on its experience in photolithography as well as on its know-how in the development of organic-inorganic hybrid materials by sol-gel process.
Therefore, we have at our disposal an excellent knowledge and comprehension of phenomenons involved in the interactions of photon with matter.
Kloé offers a large brand of adhesives, coatings and resists having recognised thermal, mecanic and optical properties.
The K-Px adhesive range developed and patented by Kloé is synthesized with organo-mineral precursors. The final compound is a hybrid structure made up of two interleaved networks, one organic, the other inorganic. These solutions exhibit quite a few recognised physical and chemical properties such as low ETC/TEC, a low shrinkage, a high mechanical resistance to chemical agents and a good aging stability. The mechanical strength and aging stability comes from the mineral network whereas the compliance and the photosensitivity come from the organic network.
K-PX ADHESIVES SPECIFICATIONS
The adhesives from the range K-PX can be activated either thermally or by UV exposure. The good mechanical strength and aging stability come from the mineral network whereas the compliance and photosensitivity comes from the organic network.
K-PT: thermal cross-linking adhesive
K-PU: low ETC/TEC UV curable adhesive
K-PUt: High thermal resistance adhesive
K-PUm: UV adhesive for optical pigtailling / assembling
K-PX ADHESIVES APPLICATIONS
Those adhesives are all ready qualified for many applications such as optical assembling for space industry, interconnects and cryogenic applications.
PHOTORESISTS : K-CL
Kloe also developed K-CL, its own range of negative tone photoresists for photolithography, based on hybrid organic-inorganic materials. The presence of a mineral network in the formulations provides these photoresists some specific mechanical properties after polymerization, such as a strong resistance to wet etching processes (semiconductors), and to dry etching processes such as RIE, DRIE and plasma etching. These photoresist are also compatible with high aspect ratios (1×50) due to their excellent mechanical characteristics. Having a large range available, K-CL photoresist offer an operating range at wavelengths between 325 and 425 nm, over thick and thin layers, deposited by spin coating, dip-coating, spray-coating, doctorblade .
K-CL PHOTORESIST APPLICATIONS
The K-CL photoresist qualified biocompatible, are perfectly adapted to microfluidic reactors fabrication. Their mechanical resistance are brought into play for high aspect ratio structures fabrication. Their low roughness makes them compatible with PDMS moldings fabrication. Finally, K-CL is also an excellent masking solution for silicon deep etching by DRIE.
GRAYSCALE RESISTS : K-NG
The K-NG resist are synthesized via a sol-gel process using organo-mineral precursors. The precurors choice enables to obtain a material with high optical transparency once polymerized. The implemented specific synthesis lead to benefit from an exposure threshold close to 0 essential to the realization of fine grayscale levels microstructures. Once exposed and chemically revealed, the surface roughness comes to around few nanometers for microstructures whose thickness is set between tens of nanometers and several tens of microns.
K-NG RESIST APLLICATIONS
Thanks to their good optical transparency in the visible and the NIR, the K-NG resists are an excellent solution for the fabrication of cylindric or spherical microlenses, single or in matrix arranged, and for high efficiency diffractive gratings. K-NG is also usable as a sacrificial grayscale lithographic layer.